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  • SIHG25N40D-GE3

SIHG25N40D-GE3

MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHG25N40D-GE3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 412
  • Description: MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 278W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1707pF @ 100V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Rise Time 57ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 25A
Threshold Voltage 3V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Pulsed Drain Current-Max (IDM) 78A
Avalanche Energy Rating (Eas) 556 mJ
Height 20.82mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
See Relate Datesheet