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  • SIHG32N50D-GE3

SIHG32N50D-GE3

MOSFET N-CH 500V 30A TO-247AC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHG32N50D-GE3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 300
  • Description: MOSFET N-CH 500V 30A TO-247AC (Kg)

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Shipping Method

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Lead Free Lead Free
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 390W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 27 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 100V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Rise Time 75ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 3V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 89A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 225 mJ
See Relate Datesheet