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  • SIHG460B-GE3

SIHG460B-GE3

MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHG460B-GE3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 805
  • Description: MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 278W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 278W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3094pF @ 100V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 31ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 117 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 2V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.25Ohm
Pulsed Drain Current-Max (IDM) 62A
DS Breakdown Voltage-Min 500V
Height 20.82mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet