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SIHG47N60EF-GE3

MOSFET N-Channel 600V EF Series


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHG47N60EF-GE3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 132
  • Description: MOSFET N-Channel 600V EF Series (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 379W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 67m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4854pF @ 100V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Rise Time 56ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 91 ns
Continuous Drain Current (ID) 47A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.065Ohm
DS Breakdown Voltage-Min 600V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet