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SIHP12N50E-GE3

VISHAY SIHP12N50E-GE3. MOSFET, N-CH, 500V, 10.5A, TO220AB-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHP12N50E-GE3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 764
  • Description: VISHAY SIHP12N50E-GE3. MOSFET, N-CH, 500V, 10.5A, TO220AB-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 114W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 886pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.5A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 10.5A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 500V
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet