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SIHP15N50E-GE3

VISHAY SIHP15N50E-GE3. MOSFET, N-CH, 500V, 14.5A, TO220AB-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHP15N50E-GE3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 980
  • Description: VISHAY SIHP15N50E-GE3. MOSFET, N-CH, 500V, 14.5A, TO220AB-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 156W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1162pF @ 100V
Current - Continuous Drain (Id) @ 25°C 14.5A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 14.5A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.28Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 28A
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet