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  • SIHP18N50C-E3

SIHP18N50C-E3

MOSFET N-CH 500V 18A TO220


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHP18N50C-E3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 797
  • Description: MOSFET N-CH 500V 18A TO220 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 223W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 223W
Case Connection DRAIN
Turn On Delay Time 80 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2942pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 44 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 500V
Nominal Vgs 5 V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 270mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
See Relate Datesheet