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  • SIHP22N60E-E3

SIHP22N60E-E3

MOSFET N-CH 600V 21A TO220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHP22N60E-E3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 410
  • Description: MOSFET N-CH 600V 21A TO220AB (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 227W
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 68ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Factory Lead Time 18 Weeks
Contact Plating Tin
Vgs (Max) ±30V
Mount Through Hole
Mounting Type Through Hole
Fall Time (Typ) 54 ns
Package / Case TO-220-3
Number of Pins 3
Turn-Off Delay Time 59 ns
Weight 6.000006g
Continuous Drain Current (ID) 21A
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Threshold Voltage 2V
Packaging Tube
Published 2011
JEDEC-95 Code TO-220AB
Part Status Active
Gate to Source Voltage (Vgs) 20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pulsed Drain Current-Max (IDM) 56A
Number of Terminations 3
Resistance 180mOhm
Additional Feature AVALANCHE RATED
DS Breakdown Voltage-Min 600V
Height 15.49mm
Subcategory FET General Purpose Power
Length 10.51mm
Technology MOSFET (Metal Oxide)
Pin Count 3
Width 4.65mm
Number of Elements 1
Radiation Hardening No
Number of Channels 1
REACH SVHC Unknown
Power Dissipation-Max 227W Tc
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Element Configuration Single
See Relate Datesheet