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  • SIHP22N60E-GE3

SIHP22N60E-GE3

MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHP22N60E-GE3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 106
  • Description: MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series E
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 180mOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 227W Tc
Element Configuration Single
Power Dissipation 227W
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 68ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 56A
DS Breakdown Voltage-Min 600V
Height 9.01mm
Length 10.51mm
Width 4.65mm
Radiation Hardening No
See Relate Datesheet