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SIHP33N60EF-GE3

VISHAY SIHP33N60EF-GE3 MOSFET, N CHANNEL, 600V, 33A, TO-220AB-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHP33N60EF-GE3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 340
  • Description: VISHAY SIHP33N60EF-GE3 MOSFET, N CHANNEL, 600V, 33A, TO-220AB-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 278W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 98m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3454pF @ 100V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 43ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 161 ns
Continuous Drain Current (ID) 33A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.098Ohm
DS Breakdown Voltage-Min 600V
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet