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  • SIHP6N40D-GE3

SIHP6N40D-GE3

VISHAY SIHP6N40D-GE3 MOSFET Transistor, N Channel, 6 A, 400 V, 0.85 ohm, 10 V, 3 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHP6N40D-GE3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 671
  • Description: VISHAY SIHP6N40D-GE3 MOSFET Transistor, N Channel, 6 A, 400 V, 0.85 ohm, 10 V, 3 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 104W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 311pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 1Ohm
DS Breakdown Voltage-Min 400V
Height 9.01mm
Length 10.51mm
Width 4.65mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet