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  • SIHS36N50D-E3

SIHS36N50D-E3

MOSFET N-CH 500V 36A SUPER-247


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHS36N50D-E3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 409
  • Description: MOSFET N-CH 500V 36A SUPER-247 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 446W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 446W
Turn On Delay Time 33 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3233pF @ 100V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Rise Time 89ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 68 ns
Turn-Off Delay Time 79 ns
Continuous Drain Current (ID) 36A
Threshold Voltage 3V
JEDEC-95 Code TO-274AA
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 332 mJ
Height 20.8mm
Length 16.1mm
Width 5.3mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
See Relate Datesheet