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  • SIHU3N50D-E3

SIHU3N50D-E3

MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHU3N50D-E3
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 657
  • Description: MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 329.988449mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 69W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 5V
Drain Current-Max (Abs) (ID) 3A
Pulsed Drain Current-Max (IDM) 5.5A
DS Breakdown Voltage-Min 500V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet