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SIHU6N65E-GE3

Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) IPAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHU6N65E-GE3
  • Package: TO-251-3 Long Leads, IPak, TO-251AB
  • Datasheet: PDF
  • Stock: 867
  • Description: Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) IPAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 78W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 4V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 56 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet