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  • SIHU7N60E-GE3

SIHU7N60E-GE3

VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHU7N60E-GE3
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 645
  • Description: VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 329.988449mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 78W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.6Ohm
DS Breakdown Voltage-Min 609V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet