English

All Products

View All >>
  • SIJ482DP-T1-GE3

SIJ482DP-T1-GE3

N-Channel 80 V 6.2 mOhm 69.4 W SMT TrenchFET Mosfet - PowerPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIJ482DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 405
  • Description: N-Channel 80 V 6.2 mOhm 69.4 W SMT TrenchFET Mosfet - PowerPAK SO-8 (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 9.5MOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 5W Ta 69.4W Tc
Element Configuration Single
Power Dissipation 69.4W
Turn On Delay Time 28 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2425pF @ 40V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Height 1.14mm
Length 5mm
Width 4.47mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet