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  • SIR158DP-T1-GE3

SIR158DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR158DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 336
  • Description: MOSFET N-CH 30V 60A PPAK SO-8 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Power Dissipation-Max 5.4W Ta 83W Tc
Operating Mode ENHANCEMENT MODE
Factory Lead Time 14 Weeks
Power Dissipation 5.4W
Mount Surface Mount
Case Connection DRAIN
Mounting Type Surface Mount
Turn On Delay Time 28 ns
Package / Case PowerPAK® SO-8
FET Type N-Channel
Number of Pins 8
Transistor Application SWITCHING
Weight 506.605978mg
Transistor Element Material SILICON
Rds On (Max) @ Id, Vgs 1.8m Ω @ 20A, 10V
Operating Temperature -55°C~150°C TJ
Vgs(th) (Max) @ Id 2.5V @ 250μA
Packaging Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds 4980pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Published 2016
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Series TrenchFET®
JESD-609 Code e3
Rise Time 36ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Pbfree Code yes
Part Status Active
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 40A
Number of Terminations 5
Gate to Source Voltage (Vgs) 20V
ECCN Code EAR99
Drain Current-Max (Abs) (ID) 60A
Resistance 1.8MOhm
Drain to Source Breakdown Voltage 30V
Height 1.04mm
Terminal Finish Matte Tin (Sn)
Length 4.9mm
Subcategory FET General Purpose Power
Width 5.89mm
Radiation Hardening No
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
See Relate Datesheet