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  • SIR164DP-T1-GE3

SIR164DP-T1-GE3

MOSFET 30V 50A 69W 2.5mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR164DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 255
  • Description: MOSFET 30V 50A 69W 2.5mohm @ 10V (Kg)

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Details

Tags

Parameters
Package / Case PowerPAK® SO-8
Rise Time 41ns
Number of Pins 8
Weight 506.605978mg
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Vgs (Max) ±20V
Packaging Tape & Reel (TR)
Published 2013
Fall Time (Typ) 39 ns
Series TrenchFET®
Turn-Off Delay Time 52 ns
JESD-609 Code e3
Pbfree Code yes
Continuous Drain Current (ID) 50A
Threshold Voltage 1.2V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate to Source Voltage (Vgs) 20V
Number of Terminations 5
ECCN Code EAR99
Drain Current-Max (Abs) (ID) 33.3A
Resistance 3.2MOhm
Drain to Source Breakdown Voltage 30V
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Pulsed Drain Current-Max (IDM) 70A
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Height 1.04mm
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Length 4.9mm
Pin Count 8
Width 5.89mm
JESD-30 Code R-PDSO-C5
Number of Elements 1
Radiation Hardening No
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
REACH SVHC Unknown
Power Dissipation-Max 5.2W Ta 69W Tc
RoHS Status ROHS3 Compliant
Operating Mode ENHANCEMENT MODE
Lead Free Lead Free
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3950pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
See Relate Datesheet