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  • SIR172DP-T1-GE3

SIR172DP-T1-GE3

MOSFET 30V 20A 29.8W 8.9mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR172DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 721
  • Description: MOSFET 30V 20A 29.8W 8.9mohm @ 10V (Kg)

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Details

Tags

Parameters
JESD-609 Code e3
Fall Time (Typ) 13 ns
Pbfree Code yes
Part Status Obsolete
Turn-Off Delay Time 19 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Continuous Drain Current (ID) 20A
ECCN Code EAR99
Resistance 12.4MOhm
Threshold Voltage 2.5V
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Gate to Source Voltage (Vgs) 20V
Technology MOSFET (Metal Oxide)
Pulsed Drain Current-Max (IDM) 50A
Terminal Position DUAL
Terminal Form C BEND
DS Breakdown Voltage-Min 30V
Peak Reflow Temperature (Cel) 260
Avalanche Energy Rating (Eas) 22 mJ
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Nominal Vgs 2.5 V
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Radiation Hardening No
Power Dissipation-Max 29.8W Tc
Element Configuration Single
REACH SVHC Unknown
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.9W
RoHS Status ROHS3 Compliant
Case Connection DRAIN
Lead Free Lead Free
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.9m Ω @ 16.1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Factory Lead Time 12 Weeks
Mount Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 997pF @ 15V
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 20A Tc
Package / Case PowerPAK® SO-8
Number of Pins 8
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 19ns
Weight 506.605978mg
Transistor Element Material SILICON
Drain to Source Voltage (Vdss) 30V
Operating Temperature -55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Packaging Tape & Reel (TR)
Published 2013
Vgs (Max) ±20V
Series TrenchFET®
See Relate Datesheet