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SIR182DP-T1-RE3

TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR182DP-T1-RE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 414
  • Description: TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET® Gen IV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 69.4W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 30V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 117A
Drain-source On Resistance-Max 0.0028Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 61.25 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet