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  • SIR424DP-T1-GE3

SIR424DP-T1-GE3

MOSFET 20V 5.5mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR424DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 167
  • Description: MOSFET 20V 5.5mohm @ 10V (Kg)

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Details

Tags

Parameters
Number of Terminations 5
ECCN Code EAR99
Resistance 7.4MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 4.8W Ta 41.7W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.8W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Factory Lead Time 14 Weeks
Fall Time (Typ) 10 ns
Mount Surface Mount
Turn-Off Delay Time 23 ns
Mounting Type Surface Mount
Continuous Drain Current (ID) 30A
Threshold Voltage 2.5V
Package / Case PowerPAK® SO-8
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 23.4A
Number of Pins 8
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 70A
Weight 506.605978mg
Height 1.04mm
Length 4.9mm
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Width 5.89mm
Radiation Hardening No
Packaging Tape & Reel (TR)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Published 2013
Lead Free Lead Free
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet