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  • SIR440DP-T1-GE3

SIR440DP-T1-GE3

MOSFET 20V 60A 104W 1.55mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR440DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 684
  • Description: MOSFET 20V 60A 104W 1.55mohm @ 10V (Kg)

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Details

Tags

Parameters
Number of Channels 1
Mount Surface Mount
Nominal Vgs 2.5 V
Height 1.04mm
Mounting Type Surface Mount
Power Dissipation-Max 6.25W Ta 104W Tc
Length 4.9mm
Element Configuration Single
Package / Case PowerPAK® SO-8
Width 5.89mm
Operating Mode ENHANCEMENT MODE
Number of Pins 8
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Weight 506.605978mg
Power Dissipation 6.25W
Lead Free Lead Free
Transistor Element Material SILICON
Case Connection DRAIN
Operating Temperature -55°C~150°C TJ
Turn On Delay Time 45 ns
Packaging Tape & Reel (TR)
FET Type N-Channel
Published 2015
Series TrenchFET®
Transistor Application SWITCHING
JESD-609 Code e3
Rds On (Max) @ Id, Vgs 1.55m Ω @ 20A, 10V
Pbfree Code yes
Part Status Active
Vgs(th) (Max) @ Id 2.5V @ 250μA
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 10V
Number of Terminations 5
ECCN Code EAR99
Resistance 1.55mOhm
Terminal Finish MATTE TIN
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Rise Time 29ns
Terminal Position DUAL
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Vgs (Max) ±20V
Time@Peak Reflow Temperature-Max (s) 40
Fall Time (Typ) 48 ns
Turn-Off Delay Time 81 ns
Pin Count 8
Continuous Drain Current (ID) 60A
JESD-30 Code R-XDSO-C5
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Qualification Status Not Qualified
Drain Current-Max (Abs) (ID) 47A
Number of Elements 1
Drain to Source Breakdown Voltage 20V
Factory Lead Time 14 Weeks
See Relate Datesheet