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  • SIR610DP-T1-RE3

SIR610DP-T1-RE3

MOSFET N-CH 200V 35.4A SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR610DP-T1-RE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 811
  • Description: MOSFET N-CH 200V 35.4A SO-8 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Manufacturer Package Identifier S17-0173-Single
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series ThunderFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 104W Tc
Power Dissipation 6.25W
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 31.9m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 100V
Current - Continuous Drain (Id) @ 25°C 35.4A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 8.6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Max Junction Temperature (Tj) 150°C
Height 1.17mm
RoHS Status ROHS3 Compliant
See Relate Datesheet