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  • SIR640ADP-T1-GE3

SIR640ADP-T1-GE3

Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR640ADP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 233
  • Description: Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP (Kg)

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Details

Tags

Parameters
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 6.25W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.25W
Case Connection DRAIN
Turn On Delay Time 38 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4240pF @ 20V
Current - Continuous Drain (Id) @ 25°C 41.6A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 70ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 60A
Factory Lead Time 14 Weeks
Threshold Voltage 2V
Mount Surface Mount
Gate to Source Voltage (Vgs) 20V
Mounting Type Surface Mount
Drain-source On Resistance-Max 0.0025Ohm
Drain to Source Breakdown Voltage 40V
Package / Case PowerPAK® SO-8
Pulsed Drain Current-Max (IDM) 350A
Number of Pins 8
Height 1.04mm
Weight 506.605978mg
Length 6.15mm
Transistor Element Material SILICON
Width 5.15mm
Radiation Hardening No
Operating Temperature -55°C~150°C TJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Packaging Tape & Reel (TR)
Lead Free Lead Free
Published 2015
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet