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  • SIR800DP-T1-GE3

SIR800DP-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR800DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 405
  • Description: MOSFET N-CH 20V 50A PPAK SO-8 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.2W Ta 69W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
Case Connection DRAIN
Turn On Delay Time 27 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5125pF @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 133nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 35.4A
Drain-source On Resistance-Max 0.0023Ohm
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 45 mJ
Nominal Vgs 600 mV
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet