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  • SIR826ADP-T1-GE3

SIR826ADP-T1-GE3

MOSFET N-CH 80V 60A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR826ADP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 185
  • Description: MOSFET N-CH 80V 60A PPAK SO-8 (Kg)

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Power Dissipation 6.25W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 40V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Fall Time (Typ) 8 ns
Package / Case PowerPAK® SO-8
Turn-Off Delay Time 34 ns
Number of Pins 8
Continuous Drain Current (ID) 23.8A
Weight 506.605978mg
Transistor Element Material SILICON
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Manufacturer Package Identifier S17-0173-Single
Operating Temperature -55°C~150°C TJ
Drain Current-Max (Abs) (ID) 60A
Packaging Digi-Reel®
Drain to Source Breakdown Voltage 80V
Published 2013
Max Junction Temperature (Tj) 150°C
Series TrenchFET®
Height 1.12mm
Pbfree Code yes
Radiation Hardening No
Part Status Active
REACH SVHC Unknown
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Number of Terminations 5
ECCN Code EAR99
Resistance 5.5mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Pin Count 8
JESD-30 Code R-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 6.25W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet