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  • SIR826DP-T1-GE3

SIR826DP-T1-GE3

MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR826DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 290
  • Description: MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Supplier Device Package PowerPAK® SO-8
Weight 506.605978mg
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 6.25W Ta 104W Tc
Element Configuration Single
Power Dissipation 6.25W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 40V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 2.9nF
Drain to Source Resistance 4mOhm
Rds On Max 4.8 mΩ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet