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  • SIR846ADP-T1-GE3

SIR846ADP-T1-GE3

MOSFET 100V 7.8mOhm@10V 60A N-Ch MV T-FET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR846ADP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 352
  • Description: MOSFET 100V 7.8mOhm@10V 60A N-Ch MV T-FET (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Drain to Source Breakdown Voltage 100V
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Pulsed Drain Current-Max (IDM) 200A
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Height 1.12mm
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Length 6.25mm
ECCN Code EAR99
Resistance 9.5MOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Width 5.26mm
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code R-PDSO-C5
Radiation Hardening No
Number of Elements 1
Number of Channels 1
REACH SVHC Unknown
Power Dissipation-Max 5.4W Ta 83W Tc
RoHS Status ROHS3 Compliant
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Lead Free Lead Free
Power Dissipation 5.4W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 50V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet