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  • SIR850DP-T1-GE3

SIR850DP-T1-GE3

MOSFET 25V 30A 41.7W 7.0mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIR850DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 588
  • Description: MOSFET 25V 30A 41.7W 7.0mohm @ 10V (Kg)

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Details

Tags

Parameters
Factory Lead Time 25 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-XDSO-C5
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 4.8W Ta 41.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.8W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 70A
Height 1.04mm
Length 4.9mm
Width 5.89mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet