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SIRA18DP-T1-GE3

MOSFET 30V 7.5mOhm@10V 13.3A N-Ch G-IV


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIRA18DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 268
  • Description: MOSFET 30V 7.5mOhm@10V 13.3A N-Ch G-IV (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.3W Ta 14.7W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.3W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Continuous Drain Current (ID) 33A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
Pulsed Drain Current-Max (IDM) 70A
DS Breakdown Voltage-Min 30V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet