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  • SIRA32DP-T1-RE3

SIRA32DP-T1-RE3

N-Channel 25 V (D-S) MOSFET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIRA32DP-T1-RE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 186
  • Description: N-Channel 25 V (D-S) MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Manufacturer Package Identifier S17-0173-Single
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET® Gen IV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 65.7W Tc
Power Dissipation 5W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4450pF @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +16V, -12V
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 51A
Drain to Source Breakdown Voltage 25V
Max Junction Temperature (Tj) 150°C
Height 1.17mm
RoHS Status ROHS3 Compliant
See Relate Datesheet