Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Turn On Time-Max (ton) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Turn Off Time-Max (toff) |
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SIHB33N60ET1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2017 | E | Active | 1 (Unlimited) | 2 | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | GULL WING | YES | R-PSSO-G2 | 1 | 1 | 278W Tc | 33A | SWITCHING | 0.099Ohm | 600V | SILICON | N-Channel | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 3508pF @ 100V | 150nC @ 10V | 33A Tc | 600V | 88A | 793 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR9210TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 3Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 2.5W | 8 ns | -2V | 3Ohm | D-Pak | 2.5W Ta 25W Tc | 1.9A | 11 ns | P-Channel | 3Ohm @ 1.1A, 10V | 4V @ 250μA | 170pF @ 25V | 8.9nC @ 10V | 12ns | 13 ns | 20V | -200V | -2 V | 1.9A Tc | 200V | 170pF | 10V | ±20V | 3 Ω | ||||||||||||||||||||||||||||||||||||||||||||
SIRA32DP-T1-RE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | S17-0173-Single | NOT SPECIFIED | NOT SPECIFIED | 1 | 5W | 14 ns | 65.7W Tc | 51A | 150°C | 24 ns | N-Channel | 1.2m Ω @ 15A, 10V | 2.2V @ 250μA | 4450pF @ 10V | 83nC @ 10V | 25V | 60A Tc | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIA432DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 6 | S-PDSO-C3 | 1 | FET General Purpose Powers | Single | 15 ns | 3V | 3.5W Ta 19.2W Tc | 10.1A | 15 ns | N-Channel | 20m Ω @ 6A, 10V | 3V @ 250μA | 800pF @ 15V | 20nC @ 10V | 11ns | 10 ns | 20V | 12A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
SQJA92EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W | 15 ns | 68W Tc | 57A | 175°C | 0.0095Ohm | 24 ns | SILICON | N-Channel | 9.5m Ω @ 10A, 10V | 3.5V @ 250μA | 2650pF @ 25V | 45nC @ 10V | 20V | 80V | 57A Tc | 54 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
SIA811ADJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | LITTLE FOOT® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2.05mm | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 Dual | 750μm | 2.05mm | Surface Mount | 28.009329mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 260 | 40 | 6 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.8W | 15 ns | 1.8W Ta 6.5W Tc | 3.2A | SWITCHING | 20 ns | SILICON | P-Channel | 116m Ω @ 2.8A, 4.5V | 1V @ 250μA | 345pF @ 10V | 13nC @ 8V | 45ns | 10 ns | 8V | -20V | Schottky Diode (Isolated) | 4.5A | 4.5A Tc | 20V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
SI2307BDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.04mm | ROHS3 Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.02mm | 1.4mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 750mW | 9 ns | 750mW Ta | 2.5A | 0.078Ohm | 25 ns | SILICON | P-Channel | 78m Ω @ 3.2A, 10V | 3V @ 250μA | 380pF @ 15V | 15nC @ 10V | 12ns | 12 ns | 20V | -30V | 30V | 2.5A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SI2329DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 1.25W | 20 ns | -350mV | 2.5W Tc | -5.3A | 150°C | SWITCHING | 46 ns | SILICON | P-Channel | 30m Ω @ 5.3A, 4.5V | 800mV @ 250μA | 1485pF @ 4V | 29nC @ 4.5V | 22ns | 20 ns | 5V | -8V | 6A | 6A Tc | 8V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||
SI7464DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | 1 | DRAIN | Single | 1.8W | 10 ns | 1.8W Ta | 1.8A | SWITCHING | 0.24Ohm | 15 ns | SILICON | N-Channel | 240m Ω @ 2.8A, 10V | 4V @ 250μA | 18nC @ 10V | 12ns | 15 ns | 20V | 200V | 1.8A Ta | 8A | 0.45 mJ | 35ns | 6V 10V | ±20V | 50ns | ||||||||||||||||||||||||||||||||||||||||||
SIR158DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | 1.04mm | 5.89mm | 1.8MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-PDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 5.4W | 28 ns | 5.4W Ta 83W Tc | 40A | SWITCHING | 47 ns | SILICON | N-Channel | 1.8m Ω @ 20A, 10V | 2.5V @ 250μA | 4980pF @ 15V | 130nC @ 10V | 36ns | 16 ns | 20V | 30V | 60A | 60A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SI4842BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 125 ns | 3W Ta 6.25W Tc | 28A | 0.0042Ohm | 30V | 38 ns | SILICON | N-Channel | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 3650pF @ 15V | 100nC @ 10V | 190ns | 13 ns | 20V | 20A | 28A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SI9407BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 4mm | 120mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | Other Transistors | 1 | Single | 2.4W | 10 ns | -3V | 2.4W Ta 5W Tc | -4.7A | 150°C | SWITCHING | 35 ns | SILICON | P-Channel | 120m Ω @ 3.2A, 10V | 3V @ 250μA | 600pF @ 30V | 22nC @ 10V | 70ns | 30 ns | 20V | -60V | 4.7A Tc | 60V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRF9640PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | -11A | No | 3 | TO-220-3 | Unknown | 19.89mm | 4.7mm | 500mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | -200V | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 14 ns | -4V | 500mOhm | TO-220AB | 125W Tc | 300 ns | -11A | 150°C | 39 ns | P-Channel | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 1200pF @ 25V | 44nC @ 10V | 43ns | 38 ns | 20V | -200V | -4 V | 11A Tc | 200V | 1.2nF | 10V | ±20V | 500 mΩ | |||||||||||||||||||||||||||||||||||||||
SUM55P06-19L-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 19mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 4 | R-PSSO-G2 | 1 | Other Transistors | 1 | Single | 125W | 12 ns | -1V | 3.75W Ta 125W Tc | -5.5A | SWITCHING | 80 ns | SILICON | P-Channel | 19m Ω @ 30A, 10V | 3V @ 250μA | 3500pF @ 25V | 115nC @ 10V | 15ns | 230 ns | 20V | -60V | 55A | 55A Tc | 60V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRFBG30PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1997 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | 3.1A | 3 | TO-220-3 | Unknown | 19.89mm | 4.7mm | 5Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 12 ns | 2V | 5Ohm | TO-220AB | 125W Tc | 620 ns | 3.1A | 150°C | 89 ns | N-Channel | 5Ohm @ 1.9A, 10V | 4V @ 250μA | 980pF @ 25V | 80nC @ 10V | 25ns | 20 ns | 20V | 1kV | 4 V | 3.1A Tc | 1000V | 980pF | 10V | ±20V | 5 Ω | ||||||||||||||||||||||||||||||||||||||||
IRL520PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.54mm | ROHS3 Compliant | Lead Free | 9.2A | 3 | TO-220-3 | Unknown | 8.76mm | 4.7mm | 270mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 60W | 9.8 ns | 2V | 270mOhm | TO-220AB | 60W Tc | 9.2A | 21 ns | N-Channel | 270mOhm @ 5.5A, 5V | 2V @ 250μA | 490pF @ 25V | 12nC @ 5V | 64ns | 27 ns | 10V | 100V | 9.2A Tc | 100V | 490pF | 4V 5V | ±10V | 270 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
IRFD9110PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.2738mm | ROHS3 Compliant | Lead Free | -700mA | No | 4 | AVALANCHE RATED | 4-DIP (0.300, 7.62mm) | Unknown | 3.3782mm | 5.0038mm | 1.2Ohm | Through Hole | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 3 | R-PDIP-T3 | Other Transistors | 1 | DRAIN | Single | 1.3W | 10 ns | -4V | 1.3W Ta | -700mA | SWITCHING | 15 ns | SILICON | P-Channel | 1.2 Ω @ 420mA, 10V | 4V @ 250μA | 200pF @ 25V | 8.7nC @ 10V | 27ns | 27 ns | 20V | 100V | -4 V | 0.7A | 700mA Ta | 5.6A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
SI3474DV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Tin | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 1 | 1 | Single | 2W | 8 ns | 3.6W Tc | 2.8A | 150°C | SWITCHING | 10 ns | SILICON | N-Channel | 126m Ω @ 2A, 10V | 3V @ 250μA | 196pF @ 50V | 10.4nC @ 10V | 68ns | 20 ns | 20V | 100V | 3.8A | 3.8A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SI2305CDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.4mm | 35mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 58A | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 8V | 1 | Single | 960mW | 20 ns | -400mV | 960mW Ta 1.7W Tc | -4.4A | 150°C | SWITCHING | 40 ns | SILICON | P-Channel | 35m Ω @ 4.4A, 4.5V | 1V @ 250μA | 960pF @ 4V | 30nC @ 8V | 20ns | 20 ns | 8V | -8V | 5.8A Tc | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
SI3443CDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | Tin | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1mm | 1.65mm | 60mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 3.2W | 27 ns | -600mV | 2W Ta 3.2W Tc | 3.9A | SWITCHING | 30 ns | SILICON | P-Channel | 60m Ω @ 4.7A, 4.5V | 1.5V @ 250μA | 610pF @ 10V | 12.4nC @ 5V | 59ns | 11 ns | 12V | -20V | -600 mV | 5.97A | 5.97A Tc | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
SI1032X-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 1.7mm | ROHS3 Compliant | Lead Free | No | 3 | LOW THRESHOLD | SC-89, SOT-490 | Unknown | 800μm | 950μm | 5Ohm | Surface Mount | 29.993795mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | Single | 300mW | 50 ns | 700mV | 300mW Ta | 200mA | SWITCHING | 20V | 50 ns | SILICON | N-Channel | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 0.75nC @ 4.5V | 25ns | 25 ns | 6V | 0.2A | 200mA Ta | 20V | 1.5V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||
SI2301BDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.02mm | 1.4mm | 100MOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 700mW | 20 ns | -950mV | 700mW Ta | -2.2A | 30 ns | SILICON | P-Channel | 100m Ω @ 2.8A, 4.5V | 950mV @ 250μA | 375pF @ 6V | 10nC @ 4.5V | 40ns | 40 ns | 8V | -20V | -950 mV | 2.2A Ta | 20V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
SQ2308CES-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | unknown | 1.12mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-236AB | 2W | 4 ns | 2V | 2W Tc | 2.3A | 175°C | 12 ns | SILICON | N-Channel | 150m Ω @ 2.3A, 10V | 2.5V @ 250μA | 205pF @ 30V | 5.3nC @ 10V | 20V | 60V | 2.3A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
SQ7414AEN-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 8 | PowerPAK® 1212-8 | No SVHC | unknown | 1.17mm | 22mOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | SQ7414AEN-T1_GE3 | NOT SPECIFIED | NOT SPECIFIED | 1 | 62W | 9 ns | 2V | 62W Tc | 16A | 175°C | 20 ns | N-Channel | 26m Ω @ 5.7A, 10V | 2.5V @ 250μA | 980pF @ 30V | 24nC @ 10V | 20V | 60V | 16A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHP10N40D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 12 ns | 147W Tc | 10A | SWITCHING | 0.6Ohm | 18 ns | SILICON | N-Channel | 600m Ω @ 5A, 10V | 5V @ 250μA | 526pF @ 100V | 30nC @ 10V | 18ns | 14 ns | 5V | 400V | 10A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHF7N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Cut Tape (CT) | 2012 | E | Active | 1 (Unlimited) | Non-RoHS Compliant | Lead Free | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 31W Tc | N-Channel | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 680pF @ 100V | 40nC @ 10V | 7A Tc | 600V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF624SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2011 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 1.1Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 3.1W | 7 ns | 2V | 1.1Ohm | D2PAK | 3.1W Ta 50W Tc | 4.4A | 20 ns | N-Channel | 1.1Ohm @ 2.6A, 10V | 4V @ 250μA | 260pF @ 25V | 14nC @ 10V | 13ns | 12 ns | 20V | 250V | 4.4A Tc | 250V | 260pF | 10V | ±20V | 1.1 Ω | |||||||||||||||||||||||||||||||||||||||||||||
SIHP20N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | Unknown | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-220AB | Single | 17 ns | 4V | 179W Tc | 19A | SWITCHING | 500V | 48 ns | SILICON | N-Channel | 184m Ω @ 10A, 10V | 4V @ 250μA | 1640pF @ 100V | 92nC @ 10V | 27ns | 25 ns | 20V | 19A Tc | 500V | 42A | 204 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRFZ48RPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | 50A | No | 3 | AVALANCHE RATED | TO-220-3 | 9.01mm | 4.7mm | Through Hole | 6.000006g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | 1 | TO-220AB | DRAIN | Single | 190W | 8.1 ns | 190W Tc | 180 ns | 50A | SWITCHING | 210 ns | SILICON | N-Channel | 18m Ω @ 43A, 10V | 4V @ 250μA | 2400pF @ 25V | 110nC @ 10V | 250ns | 250 ns | 20V | 60V | 50A Tc | 290A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFBC30APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2004 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 2.2Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 44A | 1 | 600V | 1 | Single | 74W | 9.8 ns | 4.5V | 2.2Ohm | TO-220AB | 74W Tc | 3.6A | 19 ns | N-Channel | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 510pF @ 25V | 23nC @ 10V | 13ns | 12 ns | 30V | 600V | 4.5 V | 3.6A Tc | 600V | 510pF | 10V | ±30V | 2.2 Ω |
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