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  • SIS322DNT-T1-GE3

SIS322DNT-T1-GE3

MOSFET 30V 7.5mOhm@10V 38.3A N-Ch G-IV


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIS322DNT-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 269
  • Description: MOSFET 30V 7.5mOhm@10V 38.3A N-Ch G-IV (Kg)

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Details

Tags

Parameters
JESD-30 Code S-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.2W Ta 19.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 38.3A Tc
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 38.3A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 2.4V
Drain-source On Resistance-Max 0.0075Ohm
Pulsed Drain Current-Max (IDM) 70A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 5 mJ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2004
Series TrenchFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
See Relate Datesheet