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  • SIS407DN-T1-GE3

SIS407DN-T1-GE3

MOSFET P-CH 20V 25A 1212-8 PPAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIS407DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 551
  • Description: MOSFET P-CH 20V 25A 1212-8 PPAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 15.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2760pF @ 10V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 93.8nC @ 8V
Rise Time 28ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 92 ns
Continuous Drain Current (ID) -25A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) -8V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 20 mJ
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 9.5mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.6W Ta 33W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 23 ns
See Relate Datesheet