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  • SIS412DN-T1-GE3

SIS412DN-T1-GE3

MOSFET 30V 12A 15.6W


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIS412DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 691
  • Description: MOSFET 30V 12A 15.6W (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Factory Lead Time 14 Weeks
Continuous Drain Current (ID) 8.7A
Mount Surface Mount
Threshold Voltage 1V
Mounting Type Surface Mount
Gate to Source Voltage (Vgs) 20V
Package / Case PowerPAK® 1212-8
Drain to Source Breakdown Voltage 30V
Number of Pins 8
Pulsed Drain Current-Max (IDM) 30A
Transistor Element Material SILICON
Max Junction Temperature (Tj) 150°C
Operating Temperature -55°C~150°C TJ
Nominal Vgs 1 V
Packaging Tape & Reel (TR)
Height 1.17mm
Length 3.05mm
Published 2013
Series TrenchFET®
Width 3.05mm
Radiation Hardening No
JESD-609 Code e3
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 24MOhm
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.2W Ta 15.6W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 15.6W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
See Relate Datesheet