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SIS415DNT-T1-GE3

MOSFET P-CH 20V 35A 1212-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIS415DNT-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 621
  • Description: MOSFET P-CH 20V 35A 1212-8 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2014
Series TrenchFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.7W Ta 52W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5460pF @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 38ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) -1.5V
Drain-source On Resistance-Max 0.004Ohm
Drain to Source Breakdown Voltage -20V
Avalanche Energy Rating (Eas) 20 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet