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  • SIS468DN-T1-GE3

SIS468DN-T1-GE3

MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIS468DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 226
  • Description: MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 19.5MOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code S-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 40V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 9.8A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 30A
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 5 mJ
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Length 3.4mm
Width 3.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet