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SIS488DN-T1-GE3

MOSFET 40V 5.5mOhm@10V 40A N-CH


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIS488DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 388
  • Description: MOSFET 40V 5.5mOhm@10V 40A N-CH (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 5.5mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code S-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 20V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 65ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 20 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet