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SIS782DN-T1-GE3
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are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The
basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -50°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | S-XDSO-C5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 41W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1025pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30.5nC @ 10V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 16A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0095Ohm |
| Pulsed Drain Current-Max (IDM) | 50A |
| DS Breakdown Voltage-Min | 30V |
| FET Feature | Schottky Diode (Body) |
| RoHS Status | RoHS Compliant |
See Relate Datesheet