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  • SISA18ADN-T1-GE3

SISA18ADN-T1-GE3

Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SISA18ADN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 924
  • Description: Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R (Kg)

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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 38.3A Tc
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 38.3A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) -16V
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 70A
Factory Lead Time 14 Weeks
Mount Surface Mount
Avalanche Energy Rating (Eas) 5 mJ
Mounting Type Surface Mount
Radiation Hardening No
Package / Case PowerPAK® 1212-8
Number of Pins 8
REACH SVHC Unknown
Transistor Element Material SILICON
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code S-PDSO-C5
Number of Elements 1
Power Dissipation-Max 3.2W Ta 19.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 19.8W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 15V
See Relate Datesheet