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SISS23DN-T1-GE3

SISS23DN-T1-GE3 P-channel MOSFET Transistor; 27 A; 20 V; 8-Pin PowerPAK 1212


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SISS23DN-T1-GE3
  • Package: PowerPAK® 1212-8S
  • Datasheet: PDF
  • Stock: 284
  • Description: SISS23DN-T1-GE3 P-channel MOSFET Transistor; 27 A; 20 V; 8-Pin PowerPAK 1212 (Kg)

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Details

Tags

Parameters
Vgs (Max) ±8V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 27A
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8S
Number of Pins 8
Operating Temperature -50°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 4.8W Ta 57W Tc
Element Configuration Single
Power Dissipation 4.8W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 20A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8840pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 50ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
See Relate Datesheet