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  • SISS40DN-T1-GE3

SISS40DN-T1-GE3

MOSFET 100V .0210ohm@10V 36.5A N-Ch T-FET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SISS40DN-T1-GE3
  • Package: PowerPAK® 1212-8S
  • Datasheet: PDF
  • Stock: 903
  • Description: MOSFET 100V .0210ohm@10V 36.5A N-Ch T-FET (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 21m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 845pF @ 50V
Current - Continuous Drain (Id) @ 25°C 36.5A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 5ns
Factory Lead Time 14 Weeks
Mount Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8S
Number of Pins 8
Fall Time (Typ) 5 ns
Turn-Off Delay Time 14 ns
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Continuous Drain Current (ID) 36.5A
Packaging Tape & Reel (TR)
Published 2016
Gate to Source Voltage (Vgs) 20V
Series ThunderFET®
Part Status Active
Drain to Source Breakdown Voltage 100V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Pulsed Drain Current-Max (IDM) 60A
ECCN Code EAR99
Avalanche Energy Rating (Eas) 20 mJ
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Radiation Hardening No
JESD-30 Code S-PDSO-N5
RoHS Status ROHS3 Compliant
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
See Relate Datesheet