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SISS98DN-T1-GE3

MOSFET N-CH 200V 14.1A 1212-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SISS98DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 519
  • Description: MOSFET N-CH 200V 14.1A 1212-8 (Kg)

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series ThunderFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 57W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 105m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 608pF @ 100V
Current - Continuous Drain (Id) @ 25°C 14.1A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 7.5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
See Relate Datesheet