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  • SN7002WH6327XTSA1

SN7002WH6327XTSA1

Single N-Channel 60 V 5 Ohm 1 nC SIPMOS® Small Signal Mosfet - SOT-323


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SN7002WH6327XTSA1
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 727
  • Description: Single N-Channel 60 V 5 Ohm 1 nC SIPMOS® Small Signal Mosfet - SOT-323 (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 1996
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 2.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 230mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 26μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Rise Time 2.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 230mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 5Ohm
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 4.5 pF
Height 800μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet