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SPA11N65C3XKSA1

MOSFET N-CH 650V 11A TO-220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPA11N65C3XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 639
  • Description: MOSFET N-CH 650V 11A TO-220 (Kg)

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Details

Tags

Parameters
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 33W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.38Ohm
Pulsed Drain Current-Max (IDM) 33A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 340 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
See Relate Datesheet