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SPA11N80C3XKSA2

MOSFET N-CH 800V 11A TO220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPA11N80C3XKSA2
  • Package: TO-220-3 Isolated Tab
  • Datasheet: PDF
  • Stock: 636
  • Description: MOSFET N-CH 800V 11A TO220 (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Isolated Tab
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 34W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 11A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.45Ohm
Pulsed Drain Current-Max (IDM) 33A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 470 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet