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SPA20N60C3XKSA1

Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPA20N60C3XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 406
  • Description: Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 20.7A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 34.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 34.5W
Case Connection ISOLATED
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.7A Tc
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 67 ns
Continuous Drain Current (ID) 20.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Avalanche Energy Rating (Eas) 690 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet