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SPB08P06PGATMA1

MOSFET P-CH 60V 8.8A TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPB08P06PGATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 748
  • Description: MOSFET P-CH 60V 8.8A TO-263 (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 8.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -60V
Avalanche Energy Rating (Eas) 70 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series SIPMOS®
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -8.8A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Turn On Delay Time 16 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 6.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 46ns
Drain to Source Voltage (Vdss) 60V
See Relate Datesheet