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SPB12N50C3ATMA1

MOSFET Transistor, N Channel, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPB12N50C3ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 711
  • Description: MOSFET Transistor, N Channel, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V (Kg)

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Details

Tags

Parameters
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 560V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 11.6A
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.6A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 11.6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Nominal Vgs 3 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Mounting Type Surface Mount
See Relate Datesheet