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  • SPB80N06S08ATMA1

SPB80N06S08ATMA1

Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPB80N06S08ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 886
  • Description: Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263 (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 187nC @ 10V
Rise Time 53ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.0077Ohm
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 700 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series SIPMOS®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 80A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 240μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
See Relate Datesheet